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| 2SK1671 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features * * * * * Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC - DC converter and motor drive Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1671 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW 10 s, duty cycle 1% 2. Value at TC = 25C Symbol VDSS VGSS ID ID(pulse)* IDR Pch* Tch Tstg 2 1 Ratings 250 30 30 120 30 125 150 -55 to +150 Unit V V A A A W C C 2 2SK1671 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS IGSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 250 30 -- -- 2.0 -- 12 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.075 20 3000 1250 170 45 170 250 130 1.0 400 Max -- -- 10 250 3.0 0.095 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns IF = 30 A, VGS = 0 IF = 30 A, VGS = 0, diF/dt = 100 A/s ID = 15 A, VGS = 10 V, RL = 2 Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 200 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 15 A, VGS = 10 V * ID = 15 A, VDS = 10 V * VDS = 10 V, VGS = 0, f = 1 MHz 1 Zero gate voltage drain current IDSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse test 1 3 2SK1671 Power vs. Temperature Derating 150 Channel Dissipation Pch (W) Maximum Safe Operation Area 1,000 300 rea sa ) thi S (on n ni RD 10 tio by 10 s era ited pm 0 O li P s DC W 1 is Op = 10 ms er ms ati (1 on Sh (T ot C= 25 ) C ) 100 Drain Current ID (A) 100 30 10 3 1 0.3 50 Ta = 25C 0.1 0 50 100 Case Temperature TC (C) 150 1 10 100 300 1,000 3 30 Drain to Source Voltage VDS (V) Typical Output Characteristics 50 10 V 50 8V 6V 5V 30 4.5 V Drain Current ID (A) Typical Transfer Characteristics Pulse Test 40 VDS = 10 V Pulse Test 30 40 Drain Current ID (A) 20 20 10 VGS = 4 V 10 TC = 75C 25C -25C 10 0 4 12 16 8 Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 20 0 2 6 8 4 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source Saturation Voltage VDS (on) (V) 5 Pulse Test Static Drain to Source on State Resistance RDS (on) () 0.5 0.2 0.1 0.05 Pulse Test 4 3 VGS = 10, 15 V 2 ID = 20 A 1 10 A 5A 4 12 16 8 Gate to Source Voltage VGS (V) 20 0.02 0.01 0.005 1 2 10 5 20 Drain Current ID (A) 50 100 0 4 2SK1671 Static Drain to Source on State Resistance vs. Temperature Static Drain to Source on State Resistance RDS (on) () Forward Transfer Admittance yfs (S) Forward Transfer Admittance vs. Drain Current 50 VDS = 10 V Pulse Test TC = -25C 0.2 VGS = 10 V Pulse Test 0.16 ID = 30 A 20 A 20 10 5 25C 75C 0.12 10 A 0.08 2 1 0.5 0.5 0.04 0 -40 40 0 80 120 Case Temperature TC (C) Body to Drain Diode Reverse Recovery Time 160 1 5 2 10 20 Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage 50 500 10,000 Ciss Reverse Recovery Time t rr (ns) 200 Capacitance C (pF) 100 50 1,000 Coss 20 10 5 0.5 100 Crss VGS = 0 f = 1 MHz di/dt = 100 A/s, VGS = 0 Ta = 25C, Pulse Test 1 2 10 20 5 Reverse Drain Current IDR (A) 50 10 0 10 30 40 20 Drain to Source Voltage VDS (V) 50 Dynamic Input Characteristics 500 Drain to Source Voltage VDS (V) Switching Characteristics 20 500 td (off) Gate to Source Voltage VGS (V) Switching Time t (ns) 400 VDD = 50V 100 V 200 V VGS 16 200 100 tr 50 20 10 5 0.5 . VGS = 10 V, VDD = 30 V . PW = 2 s, duty < 1% 1 5 20 2 10 Drain Current ID (A) 50 td (on) tf 300 VDS 12 200 8 VDD = 200 V 100 V 50 V 100 4 ID = 30 A Pulse Test 0 200 0 40 120 160 80 Gate Charge Qg (nc) 5 2SK1671 Reverse Drain Current vs. Source to Drain Voltage 50 Reverse Dratin Current IDR (A) Pulse Test 40 30 20 VGS = 10 V 10 0, -5 V 0 0 2.0 0.4 0.8 1.2 1.6 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance S (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 1.0 D=1 0.5 0.3 0.1 0.2 0.1 0.05 TC = 25C ch-c (t) = S (t) * ch-c ch-c = 1.0C/W, TC = 25C PDM e 0.02 0.03 0.01 10 0.01 t Puls ho 1S T 1m 10 m Pulse Width PW (s) 100 m PW 1 D = PW T 100 10 Switching Time Test Circuit Vin Monitor Waveforms 90% Vout Monitor D.U.T RL 50 Vin 10 V VDD . = 30 V . td (on) Vin Vout 10% 10% 90% tr 90% td (off) 10% tf 6 2SK1671 Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 7 |
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